kw.\*:("GaN")
Results 1 to 25 of 6306
Selection :
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2014, Vol 403, pp 48-54, issn 0022-0248, 7 p.Conference Paper
Shape-controlled synthesis of GaN microrods by ammonolysis routeKENYAN BAO; WENMIN LIU; AIHUA WANG et al.Applied surface science. 2012, Vol 263, pp 682-687, issn 0169-4332, 6 p.Article
Control of nucleation site density of GaN nanowiresCHANG, Chih-Yang; PEARTON, S. J; HUANG, Ping-Jung et al.Applied surface science. 2007, Vol 253, Num 6, pp 3196-3200, issn 0169-4332, 5 p.Article
Polarity inversion of GaN(0001) surfaces induced by Si adsorptionROSA, A. L; NEUGEBAUER, J.Surface science. 2006, Vol 600, Num 2, pp 335-339, issn 0039-6028, 5 p.Article
A critical commentary on Gans' Symbolic ethnicity and symbolic religiosity and other formulations of ethnicity and religion regarding American JewsSHAROT, S.Contemporary Jewry. 1997, Vol 18, pp 25-43, issn 0147-1694Article
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowingSHIN, In-Su; DONGHYUN LEE; LEE, Keon-Hoon et al.Thin solid films. 2013, Vol 546, pp 118-123, issn 0040-6090, 6 p.Conference Paper
Microstructure of GaN layers grown on Si(111) revealed by TEMDOBOS, L; PECZ, B; FELTIN, E et al.Vacuum. 2003, Vol 71, Num 1-2, pp 285-291, issn 0042-207X, 7 p.Conference Paper
Source-Connected p-GaN Gate HEMTs for Increased Threshold VoltageHWANG, Injun; OH, Jaejoon; HYUK SOON CHOI et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 605-607, issn 0741-3106, 3 p.Article
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting DiodesSENAWIRATNE, J; LI, Y; ZHU, M et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 607-610, issn 0361-5235, 4 p.Article
High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphireDAEHONG MIN; GEUNHO YOO; SEUNGHWAN MOON et al.Journal of crystal growth. 2014, Vol 387, pp 86-90, issn 0022-0248, 5 p.Article
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructureHARMATHA, Ladislav; STUCHLIKOVA, Lubica; RACKO, Juraj et al.Applied surface science. 2014, Vol 312, pp 102-106, issn 0169-4332, 5 p.Article
The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaNBINGLEI FU; NAIXIN LIU; JINMIN LI et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 1244-1248, issn 0361-5235, 5 p.Article
Efficient photoelectrochemical water splitting by a doping-controlled GaN photoanode coated with NiO cocatalystKANG, Jin-Ho; SOO HEE KIM; EBAID, Mohamed et al.Acta materialia. 2014, Vol 79, pp 188-193, issn 1359-6454, 6 p.Article
Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article
High-Detectivity Nitride-Based MSM Photodetectors on InGaN-GaN Multiquantum Well With the Unactivated Mg-Doped GaN LayerCHANG, Ping-Chuan; YU, C. L; CHANG, S. J et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 11-12, pp 1060-1064, issn 0018-9197, 5 p.Article
Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substratesBEL'KOV, V. V; BOTNARYUK, V. M; KATSAVETS, N. I et al.Journal of crystal growth. 1998, Vol 187, Num 1, pp 29-34, issn 0022-0248Article
« SULLA FINE DEL SACRIFICIO » IL « SAPERE SACRIFICALE» DI W BURKERT ED E. GANS NELL'EPOCA DEL POST-NARRATIVOPOLOVINEO, Davide.Studia patavina. 2009, Vol 56, Num 2, issn 0039-3304, 245, 275-296 [23 p.]Article
Growth of bulk GaN crystal by Na flux method under various conditionsMORI, Y; IMADE, M; SASAKI, T et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 72-74, issn 0022-0248, 3 p.Conference Paper
The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor depositionJUN ZHANG; WU TIAN; CHANGQING CHEN et al.Applied surface science. 2014, Vol 307, pp 525-532, issn 0169-4332, 8 p.Article
Effect of annealing on Ni/GaN(0001) contact morphologyGRODZICKI, M; MAZUR, P; ZUBER, S et al.Applied surface science. 2014, Vol 304, pp 24-28, issn 0169-4332, 5 p.Conference Paper
Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodesHEE SEOK CHOI; HAK JUN KIM; LUNG JU LEE et al.Applied surface science. 2013, Vol 283, pp 521-524, issn 0169-4332, 4 p.Article
Magnetism driven by surface dangling bonds in gallium nitride nanoclustersZHAO, X. G; TANG, Z; HU, W. X et al.Surface science. 2013, Vol 608, pp 97-101, issn 0039-6028, 5 p.Article
Over 1.0 kV GaN p―n junction diodes on free-standing GaN substratesNOMOTO, Kazuki; HATAKEYAMA, Yoshitomo; KATAYOSE, Hideo et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1535-1537, issn 1862-6300, 3 p.Article
Simulation of current spreading for GaN-based light-emitting diodesPEI WANG; WEI WEI; BIN CAO et al.Optics and laser technology. 2010, Vol 42, Num 5, pp 737-740, issn 0030-3992, 4 p.Article
Morphological and luminescent characteristics of GaN dots deposited on AlN by alternate supply of TMG and NH3TSAI, Yu-Li; GONG, Jyh-Rong; LIN, Tai-Yuan et al.Applied surface science. 2006, Vol 252, Num 10, pp 3454-3459, issn 0169-4332, 6 p.Article